Among the material products, CVD-SiC is a growth product which can be used as fixtures and components of semiconductor production equipment. SiC is the chemical compound composed of a 1:1 combination of Silicon and Carbon whose hardness ranks the third in the world surpassed only by Diamonds and Boron carbide.
Ferrotec is using silicon and carbon element containing gases for manufacturing, which is also called CVD method. For SiC wafer manufacturing, SiC is coated over the surface of the plate shaped graphite substrate by CVD. After cutting the outer edges, the graphite substrate is removed by high-temperature oxidation and then several subsequent processes are carried out to manufacture the SiC wafer. SiC has attracted more attention as a high purity material applied in the energy industry and other most advanced ones as well.
Ferrotec SiC components have strong oxidation resistance, chemical stability, heat resistance, and excellent stability even at 2000℃. They are not only widely used in the fabrication of semiconductor materials manufacturing requiring wafer boat, tubes, and dummy wafers, but also applied to fixtures used at high temperatures. SiC components also widely used in semiconductor production equipment,automobile, satellite, energy and other advanced industries.